Optimization of sensitivity and quantification in SIMS
Secondary Ion Mass Spectrometry (SIMS) is a well-established and extremely powerful technique for the chemical analysis of surfaces and thin films. Its main advantages are:
- its excellent sensitivity
- its high dynamic range
- its good mass resolution
- its ability to distinguish between isotopes.
The use of cesium can dramatically increase the sensitivity of the analysis. We have therefore developed an add-on Cs deposition system allowing the sample surface to be coated with Cs prior to or during SIMS analysis for the purpose of optimizing analytical performances. This system presents several advantages, including:
- increased sensitivities in the negative secondary ion mode (ionization probabilities of 100% for elements with high electron affinities)
- minimization or elimination of the matrix effect in the negative secondary ion mode
- optimization of the sensitivities in the MCsx+ mode for efficient elimination of the matrix effect.

Contact: Patrick PHILIPP
Investigation of particle – matter interactions
For ion-beam-based microscopy, the development of new instruments, methods and applications requires the control of processes and mechanisms like particle sputtering and ionization. We are therefore investigating particle – surface interactions by:
- experimental studies
- numerical simulations:
- Monte Carlo based on binary collision approximation
- Molecular Dynamics (MD) simulations
- Density Functional Theory (DFT) calculations.
The different aspects that are explored include:
- damage formation
- sputtering
- properties of ejected matter (e.g. energy and angular distributions)
- atomic mixing
- ionization of sputtered matter
- influence of surface contaminations
- etc.

Contact: Patrick PHILIPP