Doping mechanism in pure CuInSe₂

Auteurs

F. Werner, D. Colombara, M. Melchiorre, N. Valle, B. El Adib, C. Spindler, and S. Siebentritt

Référence

Journal of Applied Physics, vol. 119, no. 17, p. 173103, 2016

Description

We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe₂thin films for different copper-to-indium ratios and selenium excess during growth. We find that all copper-poor samples are n-type, and that hopping conduction in a shallow donor state plays a significant role for carrier transport. Annealing in sodium ambient enhances gallium in-diffusion from the substrate wafer and changes the net doping of the previously n-type samples to p-type. We suggest that sodium incorporation from the glass might be responsible for the observed p-type doping in polycrystalline Cu-poor CuInSe₂ solar cell absorbers.

Lien

doi: 10.1063/1.4947585