Establishing a pure antiferroelectric PbZrO3 phase through tensile epitaxial strain

Authors

Parmar K., Dufour P., Texier E., Carrétéro C., Li X., Godel F., Hlinka J., Dkhil B., Sando D., Aramberri H., Íñiguez-González J., Fusil S., Gloter A., Maroutian T., Garcia V.

Reference

Nature Communications, vol. 16, n° 1, art. no. 6536, 2025

Description

The nature of lead zirconate, the historical antiferroelectric material, has recently been challenged. In PbZrO₃ epitaxial films, thickness reduction engenders competition among antiferroelectric, ferrielectric and ferroelectric phases. All studies so far on PbZrO₃ films have utilized commercially-available oxide single crystals with large compressive lattice mismatch, causing the films to undergo strain relaxation. First-principles calculations have predicted that tensile strain can stabilize antiferroelectricity down to the nanometre scale. Here we use tensile strain imposed by artificial substrates of LaLuO₃ to stabilize a pure antiferroelectric phase in PbZrO₃. Sharp double hysteresis loops of polarization vs electric field show zero remanent polarization, and polar displacement maps reveal the characteristic up-up-down-down antipolar pattern down to 9 nanometre film thicknesses. Moreover, the electron beam can move this antipolar pattern through the nucleation and annihilation of translational boundaries. These results highlight the critical role of coherent epitaxial strain in the phase stability of PbZrO₃.

Link

doi:10.1038/s41467-025-61867-y